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Precise control on quantum dot (QD) number and tunnel path in a self-organized manner is crucial for effective single electron tunneling. We experimentally demonstrated a single Ge QD (~10 nm) self-aligned with nickel-silicide electrodes via Si3N4/SiO2 tunnel barriers by thermally oxidizing a SiGe nanorod. The fabricated Ge QD single hole transistor (SHT) features with clear differential conductance...
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