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Small form factors and high bandwidth are two imperatives nowadays for three-dimensional integrated circuits (3-D-ICs). These requirements can be achieved by the use of through silicon vias, by the reduction of their radius and, at the same time, of the pitch among them. Having a considerable number of devices in a limited space inevitably increases the probability of the creation of defects (short,...
Through silicon via (TSV) based 3DIC has allowed vertical integration of multiple dies for wide I/O configuration. With thousands of TSVs, data transfer rate can be reduced, while maintaining the highest bandwidth compared to the systems in conventional integrated chips and packages. The challenges lie on high yield fabrication process. The trend in dimension of TSV is continuously decreasing, which...
Through silicon via (TSV) based 3D-IC is the key technology to satisfy the continuously growing demand on lower power consumption, higher system bandwidth and smaller form factor of electronic devices. As the I/O count increases up to the order of tens of thousands for high speed data transmission, TSV diameter and interconnection pitch are reduced, which may cause various defects throughout the channel...
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