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CMOS-compatible 100 V / 650 V enhancement-mode high electron mobility transistors (E-HEMTs) and 650 V depletion-mode MISFET (D-MISFET) are fabricated on 6-inch GaN-on-Si wafers. These devices show excellent power converter switching performances. Both 100 V and 650 V E-HEMTs had passed industrial reliability qualifications. The importance of bulk leakage, interface quality and gate trapping in dynamic...
In this paper, the reliable SiNx/AlGaN/GaN MISHEMTs on silicon substrate with improved trap-related characteristics have been well demonstrated. The devices with our proposed treatment method showed less deep-level traps and more Si surface donors at SiNx-AlGaN interface. The trap related device characteristics are also improved by using our optimized treatment method. The devices with proposed treatment...
CMOS-compatible GaN-on-silicon technology with excellent D-mode MISHFET performance is realized. A low specific contact resistance Rc (0.35 Ω-mm) is achieved by Au-free process. MIS-HFET with a gate-drain distance (LGD) of 15 μm exhibits a large breakdown voltage (BV) (980 V with grounded substrate) and a low specific on-resistance (R ON,sp) (1.45 mΩ-cm2). The importance of epitaxial quality in a...
In this work, we propose the design and implementation of a 13.56 MHz GaN Class-E power amplifier, which takes into account transistor parasitic effects. The design uses the parasitic capacitance of the transistor to replace the charging capacitance, simplifying the circuit structure and obtaining a 93.6% efficiency at output power of 26.8 W. In addition, a wireless power transfer system using the...
We demonstrated lasing in a metal-coated GaN nano-stripe under room temperature pulsed operation, and the lasing mode at 370nm were observed. Aluminum and SiO2 layers were coated on the undoped GaN nano-stripe.
High quality InAlN/AlN/GaN heterostructure is grown by metal organic chemical deposition (MOCVD) on sapphire substrate. A high two-dimensional electron gas (2DEG) density of 2.5×1013 cm-2 was measured in this structure. To character the electric property of this heterostructure, a 1-μm-long gate InAlN/AlN/GaN high-electron mobility transistors (HEMTs) were fabricated. A maximum output current density...
High quality thin barrier InAlN/AlN/GaN heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). The metal-insulator-semiconductor (MIS) structure devices were fabricated with high dielectric constant material barium strontium titanate (BST). The gate leakage current is reduced more than one order of magnitude under 40 V reverse bias, by using the high dielectric constant material...
Vertically self-aligned gallium nitride nanorod arrays grown by plasma-assisted molecular-beam epitaxy are shown to behave as subwavelength optical media in both their discrete and integrated forms, which have important implications for optoelectronic applications.
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