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The authors have successfully demonstrated self-aligned high-performance inversion-channel In0.53Ga0.47As MOSFETs using UHV-deposited nano-meter thick AI2O3/GGO dual-layer dielectrics and a TiN metal gate. Record-high drain current and transconductance, despite its challenging process, were achieved. Ring gate D-mode In0.2Ga0.8As MOSFETs using as a similar dual layer gate dielectric also exhibits...
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