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Single-crystal TiN(001) layers, 60 nm thick, were grown on MgO(001) by ultra-high vacuum (UHV) reactive magnetron sputter deposition at T s =700 o C in pure N 2 . Epitaxial Al(001) overlayers, 160 nm thick, were then deposited at T s =100 o C without breaking vacuum. Changes in bilayer sheet resistance R s were monitored continuously as a function of...
On plasma-enhanced chemical vapor deposition of aluminium oxide films using trimethylaluminum (TMA) and N 2 O gases, optical emission spectroscopy (OES) analysis was performed to identify the ions and the radicals present in the glow discharge. A floating double probe was used to measure the plasma electron temperature and ion density. OES analysis of N 2 O gas—He plasma showed that...
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