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The suppression effect on deep level defects and the defect generation in Cu(InGa)Se2 solar cells by a proton implantation have been investigated using deep level transient spectroscopy (DLTS) and optical DLTS measurements. CIGS films with the thickness of ~3μm were grown on a soda-lime glass as substrate by co-sputtering method and implanted by proton with 2× 1016 cm-3 dose and in 50 keV energy,...
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