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Spontaneous emission spectra of type-II InGaN/GaNAs QW light-emitting diodes are investigated using the multiband effective mass theory. These results are compared with those of conventional InGaN/GaN QW structures. In the case of a low carrier density, a type-II InGaN/InGaN/GaN QW structure shows much larger matrix element than a conventional InGaN/GaN QW structure. On the other hand, in the case...
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