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The studies of the low frequency noise in graphene transistors with the number of carbon layers from N=1 (single layer graphene) to N=15 showed that 1/f noise becomes dominated by the volume noise when the thickness exceeds approximately 7 atomic layers. We compare these results with the data on surface and volume noise in carbon nanotubes and Si MOS.
This paper presents packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads for frequency tuning at mm-wave frequencies. The developed technique provides easy optimization to maximize the RF performance at the desired frequency without having an effect on the switch mechanics. Insertion loss less than 0.25 dB and isolation better than 20 dB are achieved from 30 to 100 GHz. A glass...
The low frequency noise has been studied in mechanically exfoliated single- and bilayer graphene deposited on Si/SiO2 substrates. Measurements were performed in 2- and 4-probe configuration schemes. The analysis of the gate voltage dependences of noise showed that noise in graphene transistors does not comply with the McWhorter model. Aging of graphene transistors due to exposure to ambient resulted...
Low frequency noise in virgin (not aged) graphene transistors might be relatively low (comparable to average Si MOSFETs), at least for high quality devices with the bottom gate configuration. Graphene channels are the dominant sources of noise, even though the contact resistances have an important effect on the noise magnitude due to the voltage re-distribution between the contacts and the channel...
Ge MOS capacitors with tri-layer gate dielectric are proposed by using GeON interlayer, TaON sandwich layer, and HfTiON high-k dielectric. Very small capacitance equivalent thickness (0.79~0.91 nm) is achieved. Experimental results show that the NO pretreated sample exhibits the best electrical properties, such as low interface-state density (5.4 × 1011 cm-2 eV-1), low gate leakage current density...
We have demonstrated that MAD-Al2O3 is an excellent candidate for the tunnel, as well as for the blocking dielectrics in NAND-type memories. Despite the limited minority carrier generation rate, the MANAS capacitors have already demonstrated superb memory characteristics, especially the 250°C retention, which we believe is exceptional and unprecedented. The process simplicity is also an attractive...
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