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Polycrystalline SiC films were deposited on graphite substrates from the gaseous mixture of CH 3 SiCl 3 and H 2 at temperatures ranging from 1273 to 1673 K by low-pressure chemical vapor deposition. Variations of deposition rate, surface morphology and preferred orientation of the films with temperature and depletion of reactants (distance from inlet in the isothermal zone...
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