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In this paper we review a dynamic device model for filamentary RRAM in HfO-based dielectrics. We summarize its transient modeling features and its statistical properties. The model explains with satisfactory quantitative resolution all main features of the RRAM switching, not just the voltage, time and temperature dependence, but also statistical fluctuations resulting from atomistic motion and their...
We review our recent work on modeling of low current filamentary switching in amorphous HfO2 RRAM. The conduction is controlled by the width of the constriction, determining the electron transmission. The set and reset processes are modeled as a dynamic flow between two oxygen vacancy reservoirs connected by a narrow constriction. Reset is described as a dynamic balance between an upward and downward...
Information about the strength of gas sources in buildings has a number of applications in the area of building automation and control, including temperature and ventilation control, fire detection, and security systems. In this paper, we consider the problem of estimating the strength of a gas source in an enclosure when some of the parameters of the gas transport process are unknown. Traditionally,...
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