The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The impact of growth conditions on indium segregation in metal-polar In0.17Al0.83N lattice-matched to GaN grown by plasma assisted molecular beam epitaxy is reported. A series of lattice-matched InAlN films was systematically grown over a wide range of temperatures and active nitrogen fluxes. The growth conditions include those reported in the literature as conducive to homogeneous In0.17Al0.83N (Kaun...
The GaAsSb/GaAs conduction band alignment is determined to be almost flat (weak type-I) in the 0.3 Sb mole fraction neighborhood where 1300nm emission is observed. Based on photoluminescence measurements and modeling the bandgap bowing parameter of pseudomorphic GaAsSb on GaAs is determined to be -2.0eV with the bowing distributed 45% to the conduction band. Using these parameters the GaAsSb band...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.