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Recently, monolithic integration of yttrium iron garnet (YIG) on silicon has attracted significant research interest both for photonic and spintronic applications. Growing phase pure, high magnetization YIG thin films on silicon is still a challenging quest. So far, different deposition and annealing conditions have been reported from different groups, leading to YIG thin films with different magnetic...
We demonstrate undoped-body, gate-all-around (GAA) Si nanowire (NW) MOSFETs with excellent electrostatic scaling. These NW devices, with a TaN/Hf-based gate stack, have high drive-current performance with NFET/PFET IDSAT = 825/950 μA/μm (circumference-normalized) or 2592/2985 μA/μm (diameter-normalized) at supply voltage VDD = 1 V and off-current IOFF = 15 nA/μm. Superior NW uniformity is obtained...
We demonstrate undoped-body, gate-all-around (GAA) Si nanowire (NW) MOSFETs with excellent electrostatic scaling. These NW devices, with a TaN/Hf-based gate stack, have high drive-current performance with NFET/PFET IDSAT = 825/950 ??A/??m (circumference-normalized) or 2592/2985 ??A/??m (diameter-normalized) at supply voltage VDD = 1 V and off-current IOFF = 15 nA/??m. Superior NW uniformity is obtained...
In this paper, thermally stable Ni-germanosilicide technology utilizing Ni-Pd alloy and Co/TiN capping layer (Ni-Pd/Co/TiN tri-layer) is proposed for high performance strained-Si CMOS technology. The proposed Ni-germanosilicide technology exhibits low temperature silicidation with a wide temperature window for rapid thermal process (RTP). Moreover, sheet resistance shows stable characteristics in...
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