The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The effect of growth temperature of AlN interlayers on the properties of GaN epilayers grown on c‐plane sapphire by metal organic chemical vapor deposition has been investigated by high resolution X‐ray diffraction (HRXRD) and Raman spectroscopy. It is concluded that the crystalline quality of GaN epilayers is improved significantly by using the high temperature AlN (HT‐AlN) interlayer in GaN buffers...
AlGaN/GaN heterostructures with multiple AlN interlayers deposited at a high‐temperature (HT) of 900 °C were grown by metalorganic chemical vapor deposition. Flat surface with few dark pits was obtained by using multiple HT‐AlN interlayers. Hall effect measurements and non‐contact sheet resistance mappings demonstrated the improvement of the electrical properties of AlGaN/GaN heterostructure. The...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.