The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We propose and demonstrate a novel, differentially operated optically clocked transistor array optoelectronic integrated circuit for high bit-rate and stable generation of asynchronous burst optical packets. With the same circuit, both 10-Gbps and 25-Gbps, 8-bit operation are optimally achieved.
We demonstrate 172-Gbps cascaded OTDM MUX and DEMUX for future LAN applications. Challenge is that the key devices are integratable, i.e. ISBT optical gates, EAM-DFB VSR MSA transceivers, quantum-dot SOAs, and mode-locked laser diodes.
By the use of a semi-insulating BH structure the authors have obtained a high-performance monolithic electroabsorption modulator/DFB laser light source having a bandwidth of 10.3 GHz and an output power of 17 mW. The chirp was only 0.1 AA under 10 Gbit/s NRZ modulation.<<ETX>>
Dynamic characteristics under 5 Gbit/s NRZ modulation are reported for a newly developed optical intensity modulator monolithically integrated with a DFB laser. Clear eye opening and a low chirp of less than 0.16 AA are attained with sufficient extinction ratio under this modulation condition.<<ETX>>
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.