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The P-sink structure is widely used in silicon-on-insulator (SOI) power devices (SOI-LIGBT and SOI-LDMOS) to extend the electrical safe operating area (E-SOA) as it can suppress the trigger of the parasitic transistor. In this paper, the electrical behavior and reliability issues in the extended E-SOA for 200-V SOI power devices with P-sink structures are investigated for the first time. For SOI-LIGBT,...
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