The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The impact of GaN devices and the improvement in efficiency while using such devices in three-phase traction inverter for Electric Vehicles are presented in this paper. Two versions of inverters have been illustrated: first one with Si-IGBT devices while second one is built with GaN-MOSFETs with similar rating of voltage and current. The loss model is expounded for both the inverters; thereafter total...
The advent of power devices based on Wide Band Gap (WBG) semiconductor materials, like the Silicon Carbide (SiC) MOSFETs, can improve the overall performance of the power converter systems, by reducing the conversion losses and enabling operation at higher switching frequency. This paper analyzes the range extension of electric vehicles (EVs) ensuing from the adoption of SiC devices for the traction...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.