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Insulated gate bipolar transistor (IGBT) modules are essential in power electronic application. Due to the improvement in chips and packaging, the maximum operation junction temperature Tvj,op of the latest IGBT module has been increased up to 175°C, comparing to 150°C of the previous generation. With the enhancement of power density, its application at high temperature gives rise to more concerns...
The competitive adsorption between suppressor and accelerator is the crucial behavior to achieve void-free filling of TSV during electrodeposition. Convective velocity and potential on the reactive electrode surface are two important factors for adsorption of additives. In this paper, a method of calculating the competitively adsorptive parameter Kads is found to quantize the effect of these factors...
TSV (through silicon via) filling is one of the key challenges for 3D integration. Non-uniform distribution of current density inside the high aspect ratio via often leads to pinch-off effect which seriously harms interconnect functionality and reliability. An additives system, consisting of an accelerator (SPS), a suppressor (PEG), a leveler (JGB) and chloride ions, is common choice for bottom-up...
The superfilling of through silicon vias (TSVs) is a technical challenge for the fabrication of modern 3D Electronic packaging. In order to achieve void-free-filling for TSVs with different aspect ratios, various organic additives need to be added into the plating bath. Since TSV filling is a complex electrochemical and physical process, it is difficult and very time-consuming to get an optimal additive...
The superfilling of through silicon vias (TSVs) is a technical challenge for the fabrication of modern 3D Electronic packaging. In order to achieve void-free-filling for TSVs with different aspect ratios, various organic additives need to be added into the plating bath. Since TSV filling is a complex electrochemical and physical process, it is difficult and very time-consuming to get an optimal additive...
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