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Ultra low dielectric constant porous silicon dioxide films were obtained through a plasma curing process. The process developed was based on a hydrogen silsesquioxane (HSQ) spin-on process with induction of porosity. The dielectric constants of plasma cured films are in a range of 2.0-2.2. The Young's modulus values of the porous silicon dioxide films are between 5.7 and 9.0 GPa. The plasma cured...
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