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The effect on the microstructure and electrical properties of (Co, Ta)-doped SnO2 varistors upon the addition of Gd2O3 was investigated. The threshold electric field of the SnO2 based varistors increased significantly from 720 V/mm to 1455 V/mm, the relative dielectric constants of the SnO2 based varistors decreased greatly from 833 to 330 as Gd2O3 concentration was increased up to 1.2 mol%. The significant...
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