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We report temperature-dependence and temporal stability studies of AlxIn1−xAsySb1−y-based avalanche photodiodes (APDs). Multiplication gain and breakdown voltage of AlxIn1−xAsySb1−y APDs have shown low gain-temperature coefficients for a wide range of temperature.
We report uni-traveling-carrier photodiodes with a quantum efficiency of 98% ±0.8% at 1064 nm. For $50~\mu \text{m}$ devices, the measured 3-dB bandwidth is 2 GHz and the dark current is 10 nA at a bias voltage of −5 V. The dark current is dominated by generation-recombination at a bias voltage of −10 V and the activation energy is 0.23 eV. At higher bias voltage, tunneling becomes a significant...
We report AlxIn1−xAsj, Sb1−y-based separate absorption, charge, and multiplication avalanche photodiodes (APDs) that operate in the short-wavelength infrared spectrum. These APDs exhibit low excess noise factor, corresponding to k = 0.01, and low dark current.
Emerging UV to blue light emitting scintillation materials promise improved radiation detection capabilities such as dual neutron-gamma detection and higher energy resolution. The use of traditional photomultiplier tubes (PMTs), with their associated high-voltage electronics often represents form factor and power-limiting component. The unique capabilities of a solid-state photomultiplier (SSPM) provides...
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