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A metal‐semiconductor phase transition in a ternary transition metal dichalcogenide (TMD) monolayer is achieved by alloying Te into WSe2 (WSe2(1−x)Te2x, where x = 0%–100%). The optical bandgaps of the WSe2(1−x)Te2x monolayer can be tuned from 1.67 to 1.44 eV (2H semiconductor) and drops to 0 eV (1Td metal), which opens up an exciting opportunity in functional electronic/optoelectronic devices.
Atomically layered 2D crystals such as transitional metal dichalcogenides (TMDs) provide an enchanting landscape for optoelectronic applications due to their unique atomic structures. They have been most intensively studied with 2H phase for easy fabrication and manipulation. 1T phase material could possess better electrocatalytic and photocatalytic properties, while they are difficult to fabricate...
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