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The front cover of this special issue is contributed by Y. F. Zhang, Z. F. Liu, and co‐workers, who describe the synthesis and interface properties of graphene and hexagonal boron nitride heterostructures. Both in‐plane (h‐BN‐G) and vertically stacked (G/h‐BN) heterostructures have attracted intense attention for energy‐band engineering and device performance optimization for graphene. On page 32,...
Research on in‐plane and vertically‐stacked heterostructures of graphene and hexagonal boron nitride (h‐BN) have attracted intense attentions for energy band engineering and device performance optimization of graphene. In this review article, recent advances in the controlled syntheses, interfacial structures, and electronic properties, as well as novel device constructions of h‐BN and graphene heterostructures...
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