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This paper demonstrates possible dipole layer formation at non-SiO2 interfaces in two cases: Al2O3/AlFxOy as an example of multi-anion systems and Al2O3/MgO as that of multi-cation systems. While unbalanced anion migration is considered as the origin at Al2O3/AlFxOy interface, cation migration could play a dominant role in the charge separation at Al2O3/MgO interface annealed at higher temperature.
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