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The evolution of the structural, electrical and optical properties in indium-tin-oxide (ITO) thin film on glass substrate prepared by DC reactive magnetron sputtering was investigated. The variation of the structural, electrical and optical properties could be largely divided into two regions of (i) the initial region I roughly up to the critical film thickness of 50nm and (ii) the stable region II...
The behaviors of the carrier concentrations and mobilities of indium–tin oxide (ITO) thin films, prepared by DC magnetron sputtering at the various oxygen flow rates, were investigated by means of the Hall technique. The relationship between the carrier concentrations and mobilities along the oxygen flow rates had two distinct features: (i) in the optimum oxygen region to 1.25 O 2 /Ar vol%,...
Carrier concentrations and mobilities of indium-tin-oxide (ITO) thin films by DC magnetron sputtering at the various process temperatures were measured using the Hall Technique. The relationship between the carrier concentrations and mobilities had two distinct regions: (i) roughly up to the process temperatures of 300 o C with carrier concentrations of 9.0x10 20 /cm 3 ...
The origin of the round pinholes, ranging 30-70μm in diameter, in indium-tin-oxide (ITO) thin films on the glass substrates were investigated. It has been found that the round pinholes in ITO thin films might arise from the tiny particles and organics, adsorbed onto the residual water of imperfectly pre-dried glass substrates at the pre-drying bath. The tiny particles and organics on the glass substrates...
The growth of indium-tin-oxide thin films as a function of thickness using DC reactive magnetron sputtering was investigated. As the film thickness grew, the crystallinity increased showing both (222) and (400) planes. However, the peak intensity ratio of I 222 /I 400 in the X-ray diffraction pattern decreased with the thickness, implying a preferred orientation...
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