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A successful demonstration of a heterojunction field effect transistor laser is described. A typical threshold current of 45 mA in a laser mode and a transconductance of 62 mS in a FET mode are obtained for the same device.<<ETX>>
A novel semiconductor laser, the 'T-squared injection buried heterostructure laser triode' (TI-BHLT), has been successfully fabricated by MOVPE with in situ HCl vapour phase mesa-etching. The laser has been operated with a threshold current of 25 mA by independently injecting electrons into an active region from two n-type embedded regions.<<ETX>>
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