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A bottom-gate, top-contact transparent thin film transistor (TFT) based on c-axis oriented, vertically aligned ZnO nanorod arrays was fabricated on glass substrates via solution processing, in which ZnO nanorod arrays were synthesized on ZnO seed layers through a simple hydrothermal route. This TFT used SiO2 and indium tin oxide as the gate insulator and gate electrode, respectively. The source and...
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