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Ultra‐Flat Graphene
In article number 2200428, Tongbo Wei, Jingyu Sun, Zhongfan Liu, and co‐workers implement direct growth of wafer‐level, ultra‐flat graphene without any wrinkles and metallic impurities on quartz via the inhibition of textured SiOx seed, identification of the critical temperature regime, and in‐situ flattening of the substrate surface.
The elimination of wrinkles has become a research hotspot in the realm of the chemical vapor deposition growth of graphene, and there have been reliable routes developed for the scenario of catalytic synthesis on metals. Nonetheless, the transfer‐free growth of graphene over insulating substrates affording ultra‐flatness remains a puzzle. Here, the authors report the direct preparation of ultra‐flat...
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