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Infrared small target detection plays an important role in military field. In this paper, we propose a new method to detect infrared small target in video sequence based on spatio-temporal saliency using phase spectrum of quaternion fourier transform. Four second-order directional derivative maps at four different directions are used to create two feature channels and the intensity and motion information...
Three types of MOS-triggered SCR structures: Merged MOS-triggered SCR, compact MOS-triggered SCR and boundary-MOS-triggered SCR devices have been fabricated and compared in 0.13 μm CMOS process for on-chip ESD protection. TLP testing results show boundary-MOS-triggered SCR structures can achieve adjustable and lower switching voltage, smaller turn-on resistance, faster turn-on speed, the best ESD...
Transmission Line Pulse (TLP) curve of high voltage SCR-LDMOS (SCR embedded in LDMOS) is measured under various repetitious TLP stress to evaluate its Electrostatic Discharge (ESD) protection capability. Results show that trigger voltage has walk-in behavior. TCAD simulation indicates its mechanism involved is explained by a base push-out effect dominated melt filament growth, that turns a robust...
A capacitance coupling complementation silicon controlled rectifies (CCCSCR) for electrostatic discharge (ESD) protection application is proposed and verified in 0.5μm BCD process. Compared with traditional complementation silicon controlled rectifies (CSCR), the CCCSCR has a lower trigger voltage. The coupling capacitance, as a tunable trigger of SCR, can meet different protection application demands...
MOS-Triggered Silicon Controlled Rectifier(SCR) has been used as on chip Electrostatic Discharge (ESD) protection. However, the inherit slow turn-on speed is a major drawback of SCR. The compact MOS-Triggered SCR devices have been proposed and investigated in a 0.13μm CMOS process with the consideration of turn-on speed. From the test results, the turn on time of compact MOS-Triggered SCR has improved...
There are few good evaluation methods to evaluate CDM ESD protection performance such as device turn-on speed, etc. A new current-waveform-based method to evaluate the turn-on speed of an ESD protection device is proposed. The method uses two Transmission-Line Pulse (TLP) Tester to investigate the turn-on characteristics of SCR and related devices. Both intrinsic and normalized turn-on conditions...
A novel silicon controled rectifiers (SCR) is presented in this paper. This SCR, named as HH-LVTSCR, is characterized as high holding voltage and low trigger voltage. Through measuring the current versus voltage (I-V) by TLP, this SCR's properties, including trigger voltage, holding voltage and failure current, are investigated. Results show that this SCR has a good electrostatic discharge (ESD) protection...
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