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One interesting result for 28nm high-k stacked n-channel MOSFET with W/L= 0.5/0.12 (μm/μm) electrically sensed demonstrates the tunneling and GIDL effects which can effectively be decoupled by gate bias at accumulation mode. Due to the drain bias assisted, the decoupling performance in this work is more apparent. In the low gate bias, the GIDL effect is clearer; reversely, the tunneling effect is...
The micro-loading effect in this work seems obviously. According to the extraction of drive current (IDS) for dense and isolated FinFET devices at the on-drawn layout (W/L=0.11/0.5 (μm/μm), the ratio with 11-fin fingers vs. single fin was 10.01. Using the re-work concept to derive the un-etching depth (ΔH) located at the inner sidewall fin height was still around 2.4 nm as the outer sidewall height...
Higher threshold-voltage (VT) doping energy provides the deeper influence to channel controllability. For drive current (IDS) consideration, the higher one demonstrates the larger IDS value, but the higher drop ratio at 125°C comparing the measurement results at channel width/channel length (W/L)=0.11/0.5(μm/μm). However, this phenomenon at W/L=0.11/2(μm/μm) is not distinct at room temperature and...
The drive current under the higher doping energy in threshold voltage (VT) adjustment shows the higher performance. Simultaneously, this consequence in VT shift under heating effect also reflects the same trend. The deviation ratios at 20KeV and 15KeV doping energies are about 26% and 28%, respectively. The subthreshold swing (S.S.) at higher doping energy is slightly lower than that at higher one...
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