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In recent years, constructing van der Waals (vdW) heterostructures based on different 2D materials has been a highly effective way to obtain desired electronic and optical properties. Herein, on the basis of first‐principles calculations, a 2D vdW heterostructure is constructed by vertically stacking the indirect‐bandgap gallium nitride (GaN) and silicane (SiH) monolayers. For the formed heterostructure,...
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