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We demonstrate InAs/GaAs quantum dot lasers on silicon-on-insulator substrates by metal-stripe wafer bonding technology. Our III-V-on-Si bonded laser exhibits room-temperature lasing at 1.3 μm with current injection through the bonding metal stripe.
InAs/GaAs quantum dot (QD) lasers on silicon-on-insulator substrates with Si rib structures are fabricated by metal-stripe wafer bonding, where the metal strips work not only as the bonding layer but also as electrodes. Our Fabry–Pérot lasers operate with a threshold current density of 520 ${\rm A}\,{\cdot }\, {\rm cm}^{-2}$ for the broad-area laser, and a threshold current of 110 mA for the ridge...
We present 1.3 µm InAs/GaAs quantum dot Fabry-Perot and photonic crystal nanocavity lasers on Si substrates fabricated by wafer bonding, with thresholds of 205 A/cm2 and 2 µW, respectively, the lowest of lasers on silicon.
Optical interconnects integrated with laser diodes, silicon optical modulators and germanium photodetectors on a single silicon substrate were demonstrated. A 5-Gbps line bit rate and 3.5-Tbps/cm2 transmission density were achieved.
Thin-film InAs/GaAs quantum dot solar cells on mechanically flexible plastic films are fabricated. A 4.1-µm-thick compound semiconductor photovoltaic layer was grown on a GaAs substrate, and then transferred onto a plastic film through a bonding technique. Our bonding scheme is mediated by a metal-epoxy agent for the realization of bonding at low temperatures (below 200 °C), enabling the use of plastic...
An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate and layer-transferred onto a Si substrate by GaAs/Si direct wafer bonding without oxide or metal mediation. This broad-area Fabry-Perot laser operates with current injection through the GaAs/Si interface and exhibits InAs quantum dot ground state...
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