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The electrical properties of hydrogen‐terminated diamond (H‐diamond) metal–insulator–‐semiconductor field‐effect transistor (MISFET) are improved remarkably using AlN/Al2O3 stack gate. Atomic‐layer‐deposited Al2O3 (ALD‐Al2O3) is formed on H‐diamond to protect the hole conductive layer at the surface, followed by the sputter‐deposited AlN (SD‐AlN) under mixed Ar+N2 atmosphere. The insulating property...
High‐crystalline quality AlN layers with an atomically flat surface are grown on (0001) sapphire and 6H‐SiC substrates by metal‐organic vapor phase epitaxy at 1400 °C without low‐temperature buffer layer. The polar direction of AlN layers is investigated by coaxial impact‐collision ion scattering spectroscopy (CAICISS). For AlN growth on sapphire substrate, trimethylaluminum (TMAl) is supplied for...
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