The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Precise doping control is of critical importance in power device fabrication using widegap materials. In this study, we characterize pn‐junctions in GaN and SiC by cathodoluminescence. To improve spatial resolution, the specimens were polished using cross‐sectional polisher. GaN specimens were successfully characterized with line profile of CL spectra across the cross‐section. On the other hand,...
GaN films grown on sapphire substrates were characterized using cathodoluminescence (CL) to identify killer defects in GaN wafers. Dislocations and two types of hexagonal pit, V‐pits and U‐pits, were observed. The optical properties of these pits were clarified by planar observation. The generation and annihilation of the pits were elucidated from the cross sectional observation.
The cross sectional...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.