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In this work, we present a model describing the boron redistribution during laser thermal annealing in the melting regime based on the adsorption of boron atoms at the solid‐liquid interface. To validate the model, we performed SIMS measurements on silicon samples implanted with boron with an energy of 3 keV and doses of 3 × 1013 cm‐2 and 4 × 1014 cm‐2 annealed with a XeCl excimer laser with a wavelength...
In this work, state‐of‐the‐art laser thermal annealing (LTA) is used to form germanide contacts on n‐doped Ge, and is compared to results generated by rapid thermal annealing (RTA). Surface topography, interface quality, crystal structure, and material stoichiometry are explored for both techniques. For electrical characterization, specific contact resistivities ϱc are extracted. It is shown that...
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