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We demonstrate InAs/GaAs quantum dot lasers on silicon-on-insulator substrates by metal-stripe wafer bonding technology. Our III-V-on-Si bonded laser exhibits room-temperature lasing at 1.3 μm with current injection through the bonding metal stripe.
InAs/GaAs quantum dot (QD) lasers on silicon-on-insulator substrates with Si rib structures are fabricated by metal-stripe wafer bonding, where the metal strips work not only as the bonding layer but also as electrodes. Our Fabry–Pérot lasers operate with a threshold current density of 520 ${\rm A}\,{\cdot }\, {\rm cm}^{-2}$ for the broad-area laser, and a threshold current of 110 mA for the ridge...
Differential pairs of metal-semiconductor-metal (MSM) germanium (Ge) photodetectors (PDs) with an epitaxially-tuned silicon germanium (SiGe) capping layer are fabricated. PDs with high responsivity (1.0 A/W) and low dark current (33 mA/cm2) are obtained, and low-noise characteristics and 10 Gbps data transmission is confirmed in the differential MSM PDs.
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