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The nature and the densities of the defects encountered in pseudomorphic ZnSe films grown by molecular beam epitaxy (MBE) on bare GaAs substrates are described. When MBE growth is performed directly on epiready substrates, the poor quality of the starting surface leads to a three dimensional (3D) growth mode and, therefore to highly defective samples (densities of defects up to 10 10 cm ...
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