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InAlN/GaN heterostructures offer some benefits over existing AlGaN/GaN heterostructures for HFET device applications. In addition to having a larger bandgap than typical AlGaN compounds used in HFET devices (with Al < 30%), which leads to better confinement and subsequent larger power carrying capacity, InAlN can be grown lattice‐matched to GaN, resulting in strain‐free heterostructures. As such,...
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