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Although selective dry etches exist for GaN, it is difficult to selectively etch AlN in heterostructures with other conventional III-N epitaxial materials. The reduction in etch rate resulting from the addition of 2%–16% scandium to ScxAl1–xN in conventional Cl2/BCl3/Ar inductively coupled plasma etching is presented. Smooth, epitaxial ScxAl1–xN layers are grown by RF-plasma-assisted molecular beam...
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