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The paper reports an theoretical investigation on the effects of material intermixing in epitaxial Ga(As)Sb/GaAs quantum dots (QDs). Conditions of type-II band alignment of Ga(As)Sb/GaAs is considered. The fabrication of Ga(As)Sb/GaAs QDs by molecular beam epitaxy is briefly described. Finite element analysis of strain in and around QD is performed. Strain-induced bandgap modification is considered...
The paper describes a method to calculate electronic band structure, carrier wave function and quantized energies of dome-shaped GaSb/GaAs quantum dot (QD) structure. Type-II band alignment of GaSb/GaAs is introduced. Then, fabrication of realistic GaSb/GaAs QDs by molecular beam epitaxy is described. Based on the structural information obtained from realistic QD, finite element analysis of strain...
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