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We have carried out very high temperature heat treatment at 1400–2700°C of about 10nm-thick amorphous carbon thin films deposited on refractory substrates MgO, Al 2 O 3 , and yttria-stabilized zirconia (YSZ) using pulsed laser deposition techniques. After the annealing, a few nanometer scale sp 2 crystallization of the films and a large corrugation with a height of more than...
We carried out the preparation and characterization of new carbon films deposited using an organic molecular beam deposition apparatus with very high substrate temperature (from room temperature to 2670K), which we newly developed. When we irradiated molecular beam of organic semiconductor perylene tetracarboxylic acid dianhydride (PTCDA) on Y 0.07 Zr 0.93 O 2 (111) at 2170K,...
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