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Current leakage sites in diamond p–n junction are determined by measuring an electron‐beam–induced current (EBIC) technique and conductive atomic force microscopy (C‐AFM). Current leakage sites in p–n diodes, particularly, can be determined by means of EBIC without destruction of the device structure. From EBIC observation, bright spots with higher signal intensity than these in surrounding region...
The long-term reliability of Schottky pn diodes (SPNDs) on diamond having widely used Ti/Pt/Au electrodes was investigated at 500°C in order to identify degradation phenomena at higher temperatures. A vital degradation event was observed after the passage of about 100 hours in that both forward and reverse currents were progressively reduced. AES depth profiling and X-STEM-EELS analyses revealed that...
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