The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We have performed micro‐photoluminescence (µ‐PL) mapping of InGaN films with thickness up to 300 nm with a large gradient of In concentration in a lateral direction (from 10% to 40%), grown by plasma‐assisted molecular beam epitaxy atop a 1.8‐µm‐thick GaN($000 \bar {\rm I}$) buffer deposited on a c‐Al2O3 substrate. The µ‐PL spectra measured at various points with different average composition show...
Dark field transmission electron microscopy by using both the (200) two beam diffraction mode and the high angle annular dark field (HAADF) method has been used to check the presence and composition of unwanted layer(s), that had formed at the place of the nominal 10 nm thick GaAs QW grown on top of the InGaP barrier in MOCVD InGaP/GaAs samples, and whose existence was suggested by cathodoluminescence...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.