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Fe and N ions were co-implanted into Si wafers using the metal vapor vacuum arc technique and Kaufman technique. Structural analysis showed that Fe ions existed in the matrix at isolated substitution sites in the low dose sample (2.0×10 16 cm −2 ), while in the high dose samples of 5.0×10 16 cm −2 and 2.0×10 17 cm −2 , the non-ferromagnetic FeSi ...
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