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The hydrogen that constitutes N-H in GaAsN grown by the chemical beam epitaxy (CBE) equally comes from the nitrogen precursors (monomethylhydrazine) and arsenic precursors (trisdimethylaminoarsenic). The ratio of the contributions from those two precursors to the N-H constitution varied with the growth temperature of GaAsN. Further, the temperature dependence was different in each local vibration...
We have developed a carbon absorber process to reduce the pattern effect. This process consists of deposition of carbon, flash lamp annealing (FLA) in an oxygen ambient and SPM-APM wet cleaning. The feature of this process is that the carbon absorber equalizes the light absorption from flash lamps macroscopically and microscopically on the annealed wafer. As a result, we can suppress the pattern effect...
We have developed a device integration scheme for embedded silicon carbon (Si:C) SD structures induced by the solid phase epitaxy (SPE) technique. Our integration scheme comprises a combination of three key processes: carbon ion implantation (I/I) with Ge pre-amorphization implantation (PAI), sRTA and LSA. The guideline of our scheme is as follows. First, carbon I/I with Ge PAI plays large roll in...
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