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A 50 mu m-spaced, eight-element individually addressable laser diode array with an AlGaAs multiquantum well (MQW) active layer lasing at around 780 nm has been fabricated. Highly uniform power/current characteristics up to 100 mW per element at 50 degrees C under CW conditions are realised for the first time. Within the array, variations in the operating currents and the beam characteristics such...
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