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Dual channel CMOS composed of InGaAs n- and Ge p-MOSFETs is considered to be an ultimate CMOS structure because high mobility of both electron and hole can be obtained [1]. Although the fabrication and independent transistor operations of InGaAs n- and Ge p-MOSFETs on the same wafer with common gate stacks (2D integration) have been demonstrated [2], the InGaAs/Ge functional CMOS has not been demonstrated...
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