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We demonstrated for the first time the device performance of (110) nMOSFETs featuring a Si migration process, resulting in better mobility and modified shape of the narrow active region, and ultra-shallow Al implantation after nickel silicide (NiSi) formation, resulting in reduced parasitic resistance. We found that these processes made the performance of (110) nMOSFETs competitive with that of (001)...
We applied flash lamp annealing (FLA) in Ni-silicidation to our developed dopant confinement layer (DCL) structure for the first time. DCL technique is a novel stress memorization technique (SMT). We successfully improved the short channel effect (SCE) with keeping a high drive current by FLA in Ni-silicidation. For pMOSFET, 2 layers Ni fully-silicide (Ni-FUSI) was selectively formed on gates, and...
This paper demonstrates the successful fabrication of sub-100 nm Ge pMOSFETs with NiGe MSD and the high device performance, for the first time. It is also revealed that impurity profile engineering is still effective in controlling the electrical characteristics of short channel Ge MOSFET and that the concept of the universality for the inversion-layer mobility does hold even for Ge p-MOSFETs.
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