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Low electron mobility causes the short diffusion length and high resistivity. To realize the tandem solar cells with high performance, the mobility must be increased. In this paper, the mechanisms that reduce electron mobility in GaAs1−xNx (0.0000<x<0.0115) were investigated from the dependence of Hall electron mobility on N composition, temperature and carrier concentration. The mobility was...
Anomalous threshold voltage increase with area scaling of Mg- or La-incorporated high-k gate dielectrics has great impact on scaled devices. This paper reveals that much amount of Mg or La capping effects for Vt reduction was disappeared with the increase of electron mobility in narrow channel nMISFETs. This phenomenon is explained with absorption of Mg and La into STI from bulk high-k layer. The...
A new powerful strain booster named as dopant confinement layer (DCL) technique is proposed for the first time. DCL technique is a novel stress memorization technique (SMT). Our proposed method doesn't require any additional capping layers used in SMT. DCL fabricated directly on the gate dielectric film effectively improved drive currents without degrading short channel immunity because DCL technique...
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