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Low electron mobility causes the short diffusion length and high resistivity. To realize the tandem solar cells with high performance, the mobility must be increased. In this paper, the mechanisms that reduce electron mobility in GaAs1−xNx (0.0000<x<0.0115) were investigated from the dependence of Hall electron mobility on N composition, temperature and carrier concentration. The mobility was...
We have successfully suppressed threshold voltage variations due to pattern effect problems and random dopant fluctuation (RDF) using an integrated FSP-FLA technology. The serious problem of the pattern effect in FLA can be solved by using a light-absorber carbon film process, together with FSP-FLA. We estimated the temperature range in our test chip was within 10°C, being the same level obtained...
We have succeeded in suppressing random threshold voltage (Vth) fluctuations by controlling capping-layers and high-k materials with metal gate first stacks for 22 nm-node devices. By employing 1-2 mono Y2O3-layers on HfSiON films, Vth fluctuations are the same as with non-capped samples, while maintaining excellent Vth controllability (|??Vth| > 180 mV). Furthermore, the devices exhibit high device...
We have developed a carbon absorber process to reduce the pattern effect. This process consists of deposition of carbon, flash lamp annealing (FLA) in an oxygen ambient and SPM-APM wet cleaning. The feature of this process is that the carbon absorber equalizes the light absorption from flash lamps macroscopically and microscopically on the annealed wafer. As a result, we can suppress the pattern effect...
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