The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
High-performance inversion-type enhancement- mode (E-mode) n-channel In0.65Ga0.35As MOSFETs with atomic-layer-deposited Al2O3 as gate dielectric are demonstrated. A 0.4-mum gate-length MOSFET with an Al2O3 gate oxide thickness of 10 nm shows a gate leakage current that is less than 5 times 10-6 A/cm2 at 4.0-V gate bias, a threshold voltage of 0.4 V, a maximum drain current of 1.05 A/mm, and a transconductance...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.